2013

1. A. Kovalovs, I. Novosjolova, E. Bizdena, Inga Bizane, L. Skardžiūtė, K. Kazlauskas, S. Juršėnas, M. Turks, “1,2,3-Triazoles as leaving groups in purine chemistry: a three-step synthesis of N6-substituted-2-triazolyl-adenine nucleosides and photophysical properties thereof”, Tetrahedron Letters, Vol. 54, p. 850-853, 2013.
2. A. Liu, A. Tuzikas, A. Žukauskas, R. Vaicekauskas, P. Vitta, M. Shur, “Cultural Preferences to Color Quality of Illumination of Different Artwork Objects Revealed by a Color Rendering Engine”, IEEE Photonics Journal, Vol. 5(1), p.6801010, 2013.
3. A. Žukauskas, M. Malinauskas, A. Kadys, G. Gervinskas, G. Seniutinas, S. Kandasamy, and S. Juodkazis, „Black silicon: substrate for laser 3D micro/nano-polymerization“, Optics Express Vol. 21 (6), p. 6901-6909, 2013.
4. A. Žukauskas, D. Meškauskas, V. Jakštas, and P. Vitta, “Negative differential photovoltage in a biased double heterojunction”, Applied Physics Letters Vol. 102, p. 073505, 2013.
   
5. D. Dobrovolskas, J. Mickevičius, G. Tamulaitis, H.S. Chen, C.P. Chen, Y.L. Jung, Y.W. Kiang, C.C. Yang, „Spatially resolved study of InGaN photoluminescence enhancement by single Ag nanoparticles“, Journal of Physics D: Applied Physics, Vol. 46, p. 145105 (5p), 2013.
6. D. Shevchenko, V. Gavryushin, J. Mickevičius, N. Starzhinskiy, I. Zenya, A. Zhukov, G. Tamulaitis, “Emission properties of ZnSe scintillation crystals co-doped by oxygen and aluminum”, Journal of Luminescence, Vol. 143, p. 473-478, 2013.
7. D. Varanius, G. Terbetas, J.V. Vaitkus, A. Vaitkuvienė, “Spinal Hernia Tissue Autofluorescence spectrum” Lasers in Medical Science, Vol. 28, p. 423-430, 2013.
8. E. Gaubas, I. Brytavskyi, T. Čeponis, J. Kusakovskij, G. Tamulaitis, “Barriel capacitance characteristics of CdS-Cu2S junction structures”, Thin Solid Films, Vol. 531, p. 131-136, 2013.
9. E. Gaubas, T. Čeponis, V. Kalesinskas, “Currents induced by injected charge in junction detectors”, Sensors, Vol. 13, p. 12295-12328, 2013.
10. E. Gaubas, V. Kovalevskij, A. Kadys, M. Gaspariūnas, J. Mickevičius, A. Jasiūnas, V. Remeikis, A. Uleckas, A. Tekorius, J. Vaitkus, A. Velička, “In situ variations of recombination characteristics in MOCVD grown GaN epi-layers during 1.7 MeV protons irradiation”, Nuclear Instruments and Methods in Physics Research B, Vol. 307, p. 370-372, 2013.
    
11. V. Palenskis, J. Matukas, S. Pralgauskaitė, D. Seliuta, I. Kašalynas, L. Subačius, G. Valušis, S.P. Khanna, and E.H. Linfield, “Low-frequency noise properties of beryllium d-doped GaAs/AlAs quantum wells near the Mott transition”, Journal of Applied Physics Vol. 113, p. 083707, 2013.
    
12. J. Mickevičius, D. Dobrovolskas, I. Šimonytė, G. Tamulaitis, C.Y. Chen, C.H. Liao, H.S. Chen, C.C. Yang, “Unintentional annealing of the active layer in the growth of InGaN/GaN quantum well light-emitting diode structures”, physica status solidi a, Vol. 210(8), p. 1657-1662, 2013.
    
13. J. Mickevičius, G. Tamulaitis, M. Shur, M. Shatalov, J. Yang, R. Gaska, “Correlation between carrier localization and efficiency droop in AlGaN epilayers”, Applied Physics Letters, Vol. 103, p.011906, 2013.
    
14. K. Jarašiūnas, S. Nargelas, R. Aleksiejūnas, S. Miasojedovas, M. Vengris, S. Okur, H. Morkoc, U. Ozgur, C. Giesen, O. Tuna, M. Heuken, “Spectral distribution of excitation-dependent recombination rate in an In0,13Ga0,87N epilayer”, Journal of Applied Physics, Vol. 113, p. 103701, 2013.
    
15. L. Minkevičius, B. Voisiat, A. Mekys, R. Venckevičius, I. Kašalynas, D. Seliutinas, G. Valušis, G. Račiukaitis, and V. Tamošūnas, “Terahertz zone plates with integrated laser-ablated bandpass filter”, Electronics Letters, Vol. 49 (1), p.49-50, 2013,
    
16. L. Minkevičius, S. Balakauskas, M. Šoliūnas, R. Suzanovičienė, J. Uzėla, G. Molis, R. Juškėnas, A. Selskis, G. Niaura, G. Valušis, V, Tamošiūnas, “Far infrared spectroscopy and imaging of Cu(In,Ga)Se2 layer”, Lithuanian Journal of Physics, Vol. 53, p. 219
17. E. Gaubas, D. Bajarūnas, T. Čeponis, D. Meškauskaitė, J. Pavlov, „Optically induced current deep level spectroscopy of radiation defects in neutron irradiated Si PAD detectors“, Lithuanian Journal of Physics, Vol. 53, No. 4, p. 215-218, 2013.
    
18. -226, 2013.
    
19. M. Čekavičiūtė, J. Simokaitienė, V. Jankauskas, S. Raišys, K. Kazlauskas, S. Juršėnas, J.V. Gražulevičius, “Structure-properties relationship of phenylethenyl-substituted triphenylamines”, Journal of Physical Chemistry C, Vol. 117, p. 7973-7980, 2013.
    
20. N.G. Starzhinskiy, O.Ts. Sidletskiy, G. Tamulaitis, K.A. Katrunov, I.M. Zenya, Yu.V. Malyukin, O.V. Viagin, A.A. Maalov, I.A. Rybalko, “Improving of LSO(Ce) Scintillator Properties by Co-Doping”, IEEE Transaction on Nuclear Science, Vol. 60 (2), p. 1427-1431, 2013.
    
21. P. Ščajev, M. Karaliūnas, E. Kuokštis, K. Jarašiūnas, “Radiative and nonradiative recombination rates in cubic SiC”, Journal of Luminescence, Vol. 134, p. 588-593 2013.
22. P. Ščajev, K. Jarašiūnas, “Temperature and excitation-dependent carrier diffusivity and recombination rate in 4H-SiC”, Journal of Physics D: Applied Physics, Vol. 46, p. 265304, 2013.
23. P. Ščajev, L. Trinkler, B. Berzina, E. Ivakin, K. Jarašiūnas, “Influence of boron on donor-acceptor pair recombination in type IIa HPHT diamonds”, Diamond and Related Materials, Vol. 36, p. 35-43, 2013.
    
24. P. Ščajev, S. Nargelas, K. Jarašiūnas, “Time-resolved free carrier lifetime microscopy in bulk GaN”, Physica Status Solidi – Rapid Research Letters, Vol. 7 (9), p. 647-650, 2013.
    
25. P. Ščajev, S. Nargelas, K. Jarašiūnas, L. Kisialiou, E. Ivakin, W. Deferme, J.D. Haen, K. Haenen, “Crystallite size dependent carrier recombination rate and thermal diffusivity in undoped and boron doped CVD diamond layers”, Physica Status Solidi A – Application and Material Science, Vol. 210 (10), p. 2022-2027, 2013.
    
26. P. Ščajev, V. Gudelis, A. Tallaire, J. Barjon, K. Jarašiūnas, “Injection and temperature dependent carrier recombination rate and diffusion length in freestanding CVD diamond”, Physica Status Solidi A – Application and Material Science, Vol. 210 (10), p. 2016-2021, 2013.
27. R. Aleksiejūnas, P. Ščajev, S. Nargelas, T. Malinauskas, A. Kadys, K. Jarašiūnas, “Impact of Diffusivity to Carrier Recombination Rate in Nitride Semiconductors: From Bulk GaN to (In,Ga)N Quantum Wells”, Japanese Journal of Applied Physics, Vol. 52, p.08JK01, 2013. .
28. R.R. Reghu, J.V. Gražulevičius, J. Simokaitienė, T. Matulaitis, A. Miasojedovas, K. Kazlauskas, S. Juršėnas, P. Data, M. Lapkowski, P. Zassowski, “Glass forming donor-substituted s-triazines: photophysical and electrochemical properties”, Dyes and Pigments, Vol. 97, p. 412-422, 2013.
29. S. Nargelas, K, Jarašiūnas, M. Vengris, E. Sakalauskas, T. Yamaguchi, Y. Nanishi, “Injection-activated defect-governed recombination rate in InN”, Japanese Journal of Applied Physics, Vol. 52, p. 08JD02, 2013.
30. T. Malinauskas, M. Daškevičienė, G. Bubnienė, I. Petrikytė, S. Raišys, K. Kazlauskas, V. Gaidelis, V. Jankauskas, R. Maldžius, S. Juršėnas, V. Getautis, “Phenylethenyl-Substituted Triphenylamines: Efficient, Easily Obtainable, and Inexpensive Hole-Transporting Materials”, Chemistry – A European Journal, Vol. 19, p. 15044-15065, 2013.
31. T. Serevičius, P. Adomėnas, O. Adomėnienė, R. Rimkus, V. Jankauskas, A. Gruodis, K. Kazlauskas, S. Juršėnas, “Photophysical properties of 2-phenylanthracene and its conformationally-stabilized derivatives”, Dyes and Pigments Vol. 98, p. 304-315, 2013.
32. V. Grivickas, A. Odrinski, V. Bikbajevas, and K. Gulbinas, “Carrier trapping and recombination in TlGaSe2 layered crystals”, Physica Status Solidi B – Basic Solid State Physics, Vol. 250 (No.1), p. 160-168, 2013.
33. V.V. Bozhko, A.V. Novosad, G.E. Davidyuk, V.R. Kozer, O.V. Parasyuk, N. Vainorius, V. Janonis, A. Sakavičius, V. Kažukauskas, “Electrical and photoelectrical properties of CuInS2-ZnIn2S4 solid solutions”, Journal of Alloys and Compounds, Vol. 553, p. 48-52, 2013.
34. M. Pranaitis, A. Sakavičius, V. Janonis, V. Kažukauskas, „Charge trapping in [poly-(2-methoxyl),5-(3,77dimethyloctyloxy)] paraphenylenevinylene synthesized in different routes affected by the energetical distribution of trapping states“, Journal of Applied Physics, Vol. 113, p. 013104, 2013.
35. D. Gudeika, R.R. Reghu, J.V. Gražulevičius, G. Buika, J. Simokaitienė, A. Miasojedovas, S. Juršėnas, V. Jankauskas, “Electron-transporting naphthalimide-substituted derivatives of fluorene”, Dyes and Pigments, Vol. 99, p. 895-902, 2013.
36. E. Stanislovaitytė, J. Simokaitienė, S. Raišys, H. Al-Attar, J.V. Gražulevičius, A. Monkman, V. Jankus, „Carbazole based polymers as host for blue iridium emitters: synthesis, photophysics and high efficiency PLEDs“, Journal of Materials Chemistry C, Vol. 1, p.8209-8221, 2013.
37. A. Koroliov, A. Arlauskas, S. Balakauskas, M. Šoliūnas, A. Maneikis, A. Krotkus, A. Šetkus, V. Tamašiūnas, „Study of terahertz emission from surface of Cu(InGa)Se2 layers“, Acta Physica Polonica A, Vol. 124(5), p. 846-848, 2013.
38. A. Žukauskas, R. Vaicekauskas, P. Vitta, A. Zabiliūtė, A. Petrulis, and M. Shur, “Color rendition engineering of phosphor-converted light-emitting diodes”, Optics Express, Vol. 21, p. 26642-26656, (2013).
39. E.V. Lutsenko, M.V. Rzheutski, V.N. Pavlovskii, G.P. Yablonskii,b, “Relationship of quantum-well potential prifile and luminescence of InGaN/GaN heterostructures”, Journal of Applied Spectroscopy, Vol. 80 (2), p. 220-225, 2013.
40. V. Viliūnas, H. Vaitkevičius, R. Stanikūnas, P. Vitta, R. Bliumas, A. Auškalnytė, A. Tuzikas, A. Petrulis, L. Dabašinskas, and A. Žukauskas, “Subjective evaluation of luminance distribution for intelligent outdoor lighting” Lighting Research and Technology, first online, 2013.
41. E. Gaubas, V. Birschak, I. Brytavskyi, T. Čeponis, D. Dobrovolskas, S. Juršėnas, J. Kusakovskij, V. Smyntyna, G. Tamulaitis, A. Tekorius, „Nonradiative and radiative recombination in CdS polycrystalline structure“, Advances in Condensed Matter Physics, Vol. 2013, p. 917543 (1-15), 2013.
42. D. Dobrovolskas, A. Vaitkevičius, J. Mickevičius, O. Tuna, G. Giesen, M. Heuken, G. Tamulaitis, „Correlation between structure and photoluminescence properties in InGaN epilayers with thicknesses below and above critical thickness“, Journal of Applied Physics, Vol. 114, p. 163516, 2013.
43. L. Skardžiūtė, K. Kazlauskas, J. Dodonova, J. Bucevičius, S. Tumkevičius, S. Juršėnas, „Optical study of the formation of pyrrolo [2,3-d]pyrimidine-based fluorescent nanoaggregates“, Tetrahedron, Vol. 69, p. 9566-9572, 2013.
44. T. Saxena, G. Tamulaitis, M. Shatalov, J. Yang, R. Gaska, M.S. Shur, “Low threshold for optical damage in AlGaN epilayers and heterostructures”, Journal of Applied Physics, Vol. 114, p. 203103, 2013. .
45. A. Tomkevičienė, G. Puckytė, J.V. Gražulevičius, K. Kazlauskas, S. Juršėnas, V. Jankauskas, “Dimethyldiphenylamino-substituted carbazoles as electronically active molecular materials”, Dyes and Pigments, Vol. 96, p. 574-580, 2013..
46. E. Gaubas, T. Čeponis, A. Jasiūnas, E. Jelmakas, S. Juršėnas, A. Kadys, T. Malinauskas, A. Tekorius, and P. Vitta, “Study of carrier recombination transient characteristics in MOCVD grown GaN dependent on layer thickness”, AIP Advances, Vol. 3, 112128, 2013..