2007

1. Z. Bougrioua, M. Azize, B. Beaumont, P. Gibart, T. Malinauskas, K. Neimontas, A. Mekys, J. Storasta, K. Jarašiūnas, “Photoelectric properties of highly excited GaN:Fe epilayers, grown by modulation- and continuous-doping technique”, Journal of Crystal Growth, 300, 228-232 (2007).
2. T. Malinauskas, R. Aleksiejūnas, K. Jarašiūnas, B. Beaumont, P. Gibart, A. Kakanakova-Georgieva, E. Janzen, D. Gogova, B. Monemar, M. Heuken, “All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN”, Journal of Crystal Growth, 300, 223-227 (2007).
3. T. Salkus, A. Kezionis, A. Dindune, Z. Kanepe, J. Ronis, J. Miškinis, V. Kazlauskienė, L.J. Gauckler, U.P. Mucke, and A.F. Orliukas, “Synthesis and characterization of Li1/3Ce2/3PO4 and LiCe2/3PO4 ceramics”, J.Phys.: Condens. Matter, 19, 106204, (2007).
4. R. Aleksiejūnas, A. Kadys, K. Jarašiūnas, F. Saas, U. Griebner, J.W. Tomm, “All-optical analysis of carrier and spin relaxation in InGaAs/GaAs saturable-absorber structures”, Appl. Phys. Lett. 90, 102105 (2007).
5. P. Vitta, P. Pobedinskas, A. Žukauskas, “Phosphor thermometry in white light-emitting diodes”, IEEE Photonics Technology Letters, 19, 399 (2007).
6. J. Mickevičius, G. Tamulaitis, E. Kuokštis, K. Liu, M.S. Shur, J.P. Zhang, and R. Gaska, “Well-width-dependent carrier lifetime in AlGaN/AlGaN quantum wells”, Appl. Phys. Lett. 90, 131907 (2007).
7. A. Kadys, M. Sūdžius, K. Jarašiūnas, P. Fochuk, P. Feychuk, M.L. Hellin, and D. Verstraeten, “Evaluation of deep-impurity governed photoelectrical properties in differently doped CdTe”, physica status solidi b, 244, 1675-1679 (2007).
8. P. Fochuk, R. Grill, A. Kadys, K. Jarašiūnas, D. Verstraeten, P. Feychuk, O. Parfenyuk, O. Panchuk, “High temperature electrical properties of CdTe<Pb> crystals under Te saturation”, physica status solidi b, 244, 1720 – 1726 (2007).
9. V. Kažukauskas, R. Jasiulionis, V. Kalendra, J.V. Vaitkus, “Influence of irradiation by 24 GeV protons on the properties of 4H-SiC radiation detectors”, Diamonds and Related Materials, 16, 1058-1061 (2007).
10. V. Kažukauskas, V. Čyras, M. Pranaitis, A. Apostoluk, L. Rocha, L. Sicot, P. Raimond, C. Sentein, “Influence of polar molecular chain orientation on optical and carrier transport properties of polymer blends”, Organic Electronics, 8, 21-28 (2007).
11. V. Kažukauskas, V. Čyras, M. Pranaitis, A. Apostoluk, L. Rocha, L. Sicot, P. Raimond and C. Sentein, “Effect of the molecular chain orientation on carrier transport and optical properties of polymer blends”, The European Physical Journal – Applied Physics, 37, 253-256 (2007).
12. V. Kažukauskas, M. Pranaitis, V. Čyras, L. Sicot, F. Kajzar, “Negative mobility dependence in polythiophenes P3OT and P3HT evidenced by the charge extraction by linearly increasing voltage method”, The European Physical Journal – Applied Physics, 37, 247-251 (2007).
13. A. Katelnikovas, P. Vitta, P. Pobedinskas, G. Tamulaitis, A. Žukauskas, J.E. Jorgensen, and A. Kareiva, “Photoluminescence in sol-gel derived YAG:Ce phosphors”, Journal of Crystal Growth, 304, 361-368 (2007).
14. J. Grant, R. Bates, W. Cunningham, A. Blue, J. Melone, F. McEwan, J. Vaitkus, E. Gaubas and V. O’Shea, “GaN as a radiation hard particle detector”, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 576, 60-65 (2007).
15. S. Sakalauskas, Z Vaitonis, R. Pūras, “A linearly variable high-voltage amplifier”, Instruments and Experimental Techniques, 50, 340-342 (2007).
16. T. Swietlik, G. Franssen, C. Skierbiszewski, R. Czernecki, P. Wisniewski, M. Krysko, M Leszczynski, I. Grzegory, P. Mensz, S. Juršėnas, T. Suski, P. Perlin, “Comparison of gain in group-III-nitride laser structures grown by metalorganic vapour phase epitaxy and plasma-assisted molecular beam epitaxy on bulk GaN substrates” Semiconductor Science and Technology, 22, 736-741 (2007).
17. E. Kuokštis, G. Tamulaitis, K. Liu, M.S. Shur, J.W. Li, J.W. Yang, M.A. Khan, “Photoluminescence dynamics in highly nonhomogeneously excited GaN”, Applied Physics Letters, 90, 161920 (2007).
18. E. Gaubas, J. Vaitkus, K. Kazlauskas, A. Žukauskas, J. Grant, R. Bates, V. O’Shea, A. Strittmatter, D. Bimberg and P. Gibart, “Recombination characteristics of the proton and neutron irradiated semi-insulating GaN structures”, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 583, 181-184 (2007).
19. E. Gaubas, A. Kadys, J. Vaitkus and E. Fretwurst, “Fluence dependent carrier lifetime variations in Si detectors determined by photoconductivity and transient grating techniques”, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 583, 204-208 (2007).
20. S. Burachas, M. Ippolitov, V. Manko, V. Lomonosov, S. Nikulin, A. Vasiliev, Yu.Savelev, A. Apanasenko, G. Tamulaitis, “Defect clusters of variable composition as an origin of coloration of oxide crystals under thermal treatment and irradiation”, Radiation Measurements, 42, 561-564 (2007).
21. A. Kadys, Ph Delaye, G Roosen, and K Jarašiūnas, “Characterization of a deep-level compensation ratio through picosecond four-wave mixing on a transient reflection grating”, Semiconductor Science and Technology, 22, 1044-1052 (2007).
22. Zheng Li, M. Abreu, P. Anbinderis, T. Anbinderis, N.D’. Ambrosio, W. de Boer, E. Borchi, K. Borer, M. Bruzzi, S. Buontempo, W. Chen, V. Cindro, A. Dierlamm, V. Eremin, E. Gaubas, V. Gorbatenko, E. Grigoriev, F. Hauler, E. Heijne, S. Heising, O. Hempel, R. Herzog, J. Härkönen, I. Ilyashenko, S. Janos, L. Jungermann, V. Kalesinskas, J. Kapturauskas, R. Laiho, P. Luukka, I. Mandic, Rita De Masi, D. Menichelli, M. Mikuz, O. Militaru, T.O. Niinikosky, V.O’. Shea, S. Pagano, S. Paul, K. Piotrzkowski, K. Pretzl, P. Rato Mendes, X. Rouby, G. Ruggiero, K. Smith, P. Sonderegger, P. Sousa, E. Tuominen, E. Tuovinen, E. Verbitskaya, J. Vaitkus, E. Wobst and M. Zavrtanik, “Cryogenic Si detectors for ultra radiation hardness in SLHC environment”, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 579, 775-781 (2007).
23. X. Rouby, P. Anbinderis, T. Anbinderis, N. D’Ambrosio, R. Bates,W. de Boer, H. Bol, E. Borchi, M. Bruzzi, S. Buontempo, C. Buttar, W. Chen, V. Cindro, V. Eremin, A. Furgeri, E. Gaubas, E. Grigoriev, J. Härkönen, E. Heijne, S. Heising, I. Ilyashenko, V. Kalesinskas, M. Krause, Z. Li, P. Luukka, I. Mandic, D. Menichelli, M. Mikuz, O. Militaru S. Mueller, T.O. Niinikoski, V. O’Shea, S. Pagano, C. Parkes, K. Piotrzkowski, S. Pirollo, P. Pusa, S. Reinhardt, J. Räisänen, E. Tuominen, E. Tuovinen, J. Vaitkus, E. Verbitskaya, S. Väyrynen, M. Zavrtanik, “Recent developments of CERN RD39 cryogenic tracking detectors collaboration”, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 583, 99-103 (2007).
24. J. Požela, K. Požela, V. Jucienė, S. Balakauskas, V. Evtikhiev, A. Scholnik, J. Storasta, A. Mekys. Enhancement of electron mobility in AlGaAs/GaAs/AlGaAs double barrier heterostructure by inserting thin InAs phonon barriers into GaAs quantum well. Физика и техника полупроводников, (Semiconductors, 41, 1439-1444 (2007).
25. J. Janavičius, J. Storasta, R. Purlys, A. Mekys, S. Balakauskas, Ž. Norgėla, “Crystal Lattice and Carriers Hall Mobility Relaxation Processes in Si Crystal Irradiated by Soft X-rays”. ACTA PHYSICA POLONICA A, 112, 55-68 (2007).
26. S.F. Burachas, A.A. Vasil’ev AA, M.S. Ippolitov, V.I. Man’ko, Y.A. Savel’ev, G. Tamulaitis, “Influence of cluster defects of variable composition on the optical and radiative characteristics of oxide crystals”, Crystallography Reports, 52,1088-1093 (2007).
27. A. Ramanavicius, N. Kurilčik, S. Juršėnas, A. Finkelsteirtas, A. Ramanavičienė, “Conducting polymer based fluorescence quenching as a new approach to increase the selectivity of immunosensors”, Biosensors & Bioelectronics, 23, 499-505(2007).
28. Ž. Lukšienė, N. Kurilčik, S. Juršėnas, S. Radžiutė and V. Būda, “Towards environmentally and human friendly insect pest control technologies: Photosensitization of leafminer flies Liriomyza bryoniae”, Journal of Photochemistry and Photobiology B: Biology, 89, 15-21 (2007).
29. C. Sentein, L. Rocha, A. Apostoluk, P. Raimond, I. Duyssens, I. Van Severen, T. Cleij, L. Lutsen, D. Vanderzande, V. Kažukauskas, M. Pranaitis, V. Čyras, “Evidence of the improvement of photovoltaic efficiency by polar molecule orientation in a new semiconducting polymer” Solar Energy Materials and Solar Cells, 91, 1816-1824 (2007).
30. V. Kažukauskas, R. Jasiulionis, V. Kalendra, J.V. Vaitkus, “The effect of irradiation with high-energy protons on 4H-SiC detectors”, Semiconductors, 41, 345-352 (2007).
31. P. Grivickas, V. Grivickas, J. Linnros, A. Galeckas, “Fundamental band edge absorption in nominally undoped and doped 4H-SiC”, Journal of Applied Physics, 101, 123521 (2007).
32. E. Gaubas, G. Juška, J. Vaitkus and E. Fretwurst, “Characterization of the radiation induced defects in Si detectors by carrier transport and decay transients”, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 583, 185-188 (2007).
33. P.A. Semenov, A.V. Uzunian, A.M. Davidenko, A.A. Derevschikov, Y.M. Goncharenko, V.A. Kachanov, V.Y. Khodyrev, A.P. Meschanin, N.G. Minaev, V.V. Mochalov, Y.M. Melnick, A.V. Ryazantsev, A.N. Vasiliev, S.F. Burachas, M.S. Ippolitov, V. Manko, A.A. Vasiliev, A.V. Mochalov, R. Novotny, G. Tamulaitis, “First study of radiation hardness of lead tungstate crystals at low temperatures”, Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 582, 575-580 (2007).
34. A. Urbonavičiutė, P. Pinho, G. Samuolienė, P. Duchovskis, P. Vitta, A. Stonkus, G. Tamulaitis, A. Žukauskas, L. Halonen, “Effect of short-wavelength light on lettuce growth and nutritional quality”, Sodoninkystė ir Daržininkystė, 26, 157-165 (2007).
35. V. Kažukauskas, A. Jurgilaitis, J.V. Vaitkus, “Analysis of photoelectrical properties and current transient behaviour in TlBr”, Advanced Optical Materials, Technologies, and Devices, 6596, 65960C (2007).
36. V. Kažukauskas, R. Jasiulionis, V. Kalendra, J.V. Vaitkus, “Variation of the properties of 4H-SiC radiation detectors upon irradiation by 24 GeV protons”, Advanced Optical Materials, Technologies, and Devices, 6596, 65960B (2007).
37. G. Račiukaitis, M. Brikas, V. Kazlauskienė, J. Miškinis, “Doping of silicon by carbon during laser ablation process”, COLA’05: 8th International Conference on Laser Ablation, Journal of Physics Conference Series, 59, 150-154 (2007).
38. A. Kadys, R. Aleksiejūnas, K. Jarašiūnas, L. Subacius, “Deeper insight into non-equilibrium carrier dynamics in InP : Fe: experimental and modeling”, Proceedings of the Society of Photo-optical Instrumentation Engineers (SPIE), eds. S. Asmontas, J. Gradauskas, Advanced Optical Materials, Technologies, and Devices, 6596, S5960-S5960 (2007).
39. S. Nargelas, R. Aleksiejūnas, A. Kadys, V. Gudelis, K. Jarašiūnas, “Mapping of differently doped InP wafers by nanosecond and picosecond four-wave mixing techniques”, Proceedings of the Society of Photo-optical Instrumentation Engineers (SPIE), eds. S. Asmontas, J. Gradauskas, Advanced Optical Materials, Technologies, and Devices, 6596, 65960R (2007).
40. E. Kuokštis, V. Liuolia, S. Miasojedovas, S. Juršėnas, A. Žukauskas, M Leszczynski, P. Perlin, T. Suski, “Stimulated emission and optical gain in nitride-based compounds and quantum structures”, Proceedings of the Society of Photo-optical Instrumentation Engineers (SPIE), eds. S. Asmontas, J. Gradauskas, Advanced Optical Materials, Technologies, and Devices, 6596, 659605 (2007).
41. R. Aleksiejūnas, A. Kadys, K. Jarašiunas, F. Saas, U. Griebner, J.W. Tomm, “Carrier transport and recombination in resonantly excited InGaAs/GaAs MQWs”, AIP Conference Proceedings, eds. Jantsch W, Schaffler F, Physics of Semiconductors, pts A and B, 893, 461-462 (2007).
42. K. Jarašiūnas, T. Malinauskas, R. Aleksiejūnas, “Dislocation-density dependent carrier lifetime and stimulated recombination threshold in GaN”, AIP Conference Proceedings, eds. Jantsch W, Schaffler F, Physics of Semiconductors, pts A and B, 893, 295-296 (2007).
43. V. Gavriūšinas, “Quantum well interface broadening effects”, Proceedings of the Society of Photo-optical Instrumentation Engineers (SPIE), eds. S. Asmontas, J. Gradauskas, Advanced Optical Materials, Technologies, and Devices, 6596, 59619-59619 (2007).
44. M. Godlewski, R. Bozek, S. Miasojedovas, S. Juršėnas, K. Kazlauskas, A. Žukauskas, M.R. Phillips, R. Czernecki, G. Targowski, P. Perlin, M. Leszczynski, T. Bottcher, S. Figge, D. Hommel, “Micro-analysis of light emission properties of GaN-based laser diodes”, physica status solidi c, 4, 2818-2821 (2007).
45. S. Sakalauskas, and Z. Vaitonis, “Dynamic C-V Characteristics of MOS Structures”, Lithuanian Journal of Physics, 47, 451-456 (2007).
46. A. Urbelis, S. Tamašiūnas, E. Zalieckienė, “Fizikos ir chemijos papildomi užsiėmimai humanitarinio profilio abiturientams VGTU inžinerinės studijų programose”, Fizikos mokymo bendrojo lavinimo mokykloje ir technikos bei technologijos universitetuose – dermė ir perimamumas”, Vilniaus Technika, 101-108 (2007).
47. S. Tamošiūnas, M. Tamošiūnienė, and M. Žilinskas, “Calculation of electromagnetic wave attenuation due to rain using rainfall data of long and short duration”, Lithuanian Journal of Physics, 47, 163-168 (2007).
48. A. Kurilčik, R. Miklušytė-Čanova, S. Žilinskaitė, S. Dapkūnienė, P. Duchovskis, G. Kurilčik, G. Tamulaitis, A. Žukauskas, “In vitro cultivation of grape culture under solid-state lighting” Sodininkystė ir daržininkystė 26, 235-241 (2007).
49. K. Jarašiūnas, R. Aleksiejūnas, T. Malinauskas, Lietuvos Respublikos Patentas “Priverstinės spinduliuotės slenkstinės energijos nustatymo puslaidininkiuose būdas”, patento Nr. 5461 (2007).
50. K. Neimontas, K. Jarašiūnas, M. Soueidan, G. Ferro, Y. Monteil, “Nonequilibrium carrier dynamics in DPB-Free 3C-SiC layer studied by dynamic grating technique in wide excitation and temperature range”, Material science forum, 556-557, 395-398 (2007).